Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.
Developing Low-Noise GaAs JFETs For Cryogenic Operation
NASA Tech Briefs ; 19 , 9
1995-09-01
Miscellaneous
No indication
English
Developing Low-Noise GaAs JFETs for Cryogenic Operation
Online Contents | 1995
Cryogenic gallium GaAs JFETs [2226-02]
British Library Conference Proceedings | 1994
|Recent advances in GaAs JFETs for deep cryogenic focal plane readouts [3360-12]
British Library Conference Proceedings | 1998
|Progress in GaAs JFETs for 4-K IR readout applications [2745-14]
British Library Conference Proceedings | 1996
|Cryogenic Operation of GaAs Based Multiplier Chains
NTRS | 2000
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