Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.


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    Title :

    Developing Low-Noise GaAs JFETs For Cryogenic Operation


    Contributors:

    Published in:

    Publication date :

    1995-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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