Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Developing Low-Noise GaAs JFETs For Cryogenic Operation


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.09.1995



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





    Cryogenic gallium GaAs JFETs [2226-02]

    Cunningham, T. J. / Fossum, E. R. / SPIE | British Library Conference Proceedings | 1994


    Recent advances in GaAs JFETs for deep cryogenic focal plane readouts [3360-12]

    Cunningham, T. J. / Fitzsimmons, M. / SPIE | British Library Conference Proceedings | 1998


    Progress in GaAs JFETs for 4-K IR readout applications [2745-14]

    Cunningham, T. J. / SPIE | British Library Conference Proceedings | 1996


    Cryogenic Operation of GaAs Based Multiplier Chains

    Mehdi, I. / Maestrini, A. / Pukala, D. et al. | NTRS | 2000