Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.


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    Title :

    Epitaxial Deposition Of Germanium Doped With Gallium


    Contributors:

    Published in:

    Publication date :

    1994-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






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