Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.
Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si
NASA Tech Briefs ; 18 , 12
1994-12-01
Miscellaneous
No indication
English
Porous SixGe1 - x Layers Within Single Crystals of Si
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