Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.


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    Title :

    Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si


    Contributors:

    Published in:

    Publication date :

    1994-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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