Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.


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    Titel :

    Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.12.1994



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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