Improved method for fabrication of GaAs-based back-to-back planar varactor diodes simplifies processing and makes fabricated devices less vulnerable to damage at various intermediate process steps. Expected to increase device yields and offers several improvements over older method. Process steps modified and juggled providing simplified processing of devices that are more rugged.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Improved Fabrication Of Back-To-Back Planar Varactor Diodes



    Published in:

    Publication date :

    1994-10-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






    Back-To-Back Barrier Varactor Frequency Multipliers

    Choudhury, Debabani / Smith, R. Peter / Martin, Suzanne C. et al. | NTRS | 1995



    A Tripler to 220 GHz Using a Back-To-Back Barrier-N-N(sup +) Varactor Diode

    Choudhury, D. / Siegel, P. H. / Raisanen, A. V. et al. | NTRS | 1994