Improved method for fabrication of GaAs-based back-to-back planar varactor diodes simplifies processing and makes fabricated devices less vulnerable to damage at various intermediate process steps. Expected to increase device yields and offers several improvements over older method. Process steps modified and juggled providing simplified processing of devices that are more rugged.


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    Titel :

    Improved Fabrication Of Back-To-Back Planar Varactor Diodes


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1994-10-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch