Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.


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    Title :

    Infrared Multiple-Quantum-Well Phototransistor


    Contributors:

    Published in:

    Publication date :

    1992-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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