Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.
Infrared Multiple-Quantum-Well Phototransistor
NASA Tech Briefs ; 16 , 4
1992-04-01
Miscellaneous
No indication
English
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