Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.


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    Titel :

    Infrared Multiple-Quantum-Well Phototransistor


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.04.1992



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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