We propose and demonstrate a highly sensitive phototransistor (14.5¿m). An electrically isolated quantum well (QW) island serves as a photo-sensitive gate (200×50¿m) to a nearby two-dimensional conducting channel. Photoelectrons are excited via intersubband transition and escape from the QW, causing the QW to charge up positively. This is, in turn, sensed by the conductance increase in the nearby channel. Reducing the lateral size of the photo-sensitive QW gate (1×1 ¿m), we achieve photon-counting level sensitivity.


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    Titel :

    Highly Sensitive Midinfrared Phototransistor


    Beteiligte:
    An, Zhenghua (Autor:in) / Ueda, T. (Autor:in) / Komiyama, S. (Autor:in) / Hirakawa, K. (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1234822 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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