AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.
High-Power AlGaAs Quantum-Well Lasers On Si Substrates
NASA Tech Briefs ; 15 , 9
1991-09-01
Miscellaneous
No indication
English
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