Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Rapid Dry Etching Of Photoresists Without Toxic Gases


    Contributors:

    Published in:

    Publication date :

    1991-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    Critical review on photoresists

    Ekhorutomwen, S. A. / Sawan, S. P. | British Library Conference Proceedings | 1996


    Energetic Atoms Would Etch Photoresists Anisotropically

    Koontz, Steven / Cross, Jon | NTRS | 1993


    Toxic Gases from Fire in Electric Vehicles

    Willstrand, Ola / Bisschop, Roeland / Blomqvist, Per et al. | BASE | 2020

    Free access

    The normalization of toxic substances in exhaust gases

    Charybina, E.I. | Tema Archive | 1992


    Holographic recording in amorphous chalcogenide semiconductor photoresists [3347-06]

    Teteris, J. / Russian Academy of Sciences; Institute of Optical Neural Technologies / SPIE et al. | British Library Conference Proceedings | 1998