Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.
Rapid Dry Etching Of Photoresists Without Toxic Gases
NASA Tech Briefs ; 15 , 6
1991-06-01
Sonstige
Keine Angabe
Englisch
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