Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.


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    Titel :

    Rapid Dry Etching Of Photoresists Without Toxic Gases


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1991-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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