Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.


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    Title :

    Phototransistors For Long-Wavelength Infrared


    Contributors:

    Published in:

    Publication date :

    1991-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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