Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.
Phototransistors For Long-Wavelength Infrared
NASA Tech Briefs ; 15 , 5
1991-05-01
Miscellaneous
No indication
English
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