Modifications of design and fabrication of surface-channel planar Schottky diode (GSC-13063) reduce parasitic capacitances to theoretical minimum, eliminate buried layer of conductive material between anode contact and semi-insulating substrate, and reduce thickness of diode chip. Changes in epitaxial layer structure and additional fabrication steps reduce conversion loss in millimeter and submillimeter mixers.
Improved Planar Schottky Diode
NASA Tech Briefs ; 15 , 5
1991-05-01
Miscellaneous
No indication
English
A 119 GHz Planar Schottky Diode Mixer for a Space Application
British Library Online Contents | 1996
|Schottky Diode With Surface Channel
NTRS | 1988
|Planar Schottky Technology for Submillimetre Wavelengths
British Library Online Contents | 1996
|British Library Online Contents | 1998
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