New fabrication method produces pinhole-free film of cobalt silicide on silicon substrate. In new method, cobalt and silicon evaporated from electron-beam sources onto substrate of silicon having <111> crystal orientation. Materials deposited in stoichiometric ratio of two silicon atoms to one of cobalt, yielding single-crystal CoSi2 film 5 to 10 nm thick. Layer of amorphous silicon 1 to 2 nm thick deposited on CoSi2. Specimen then annealed at 550 degree C for 10 min. Absence of pinholes critical to operation of multilayer devices employing CoSi2 layers, such as metal base transistor.


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    Title :

    Deposition Of Pinhole-Free CoSi2 Film


    Contributors:

    Published in:

    Publication date :

    1989-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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