Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Growing Gallium Arsenide On Silicon


    Contributors:

    Published in:

    Publication date :

    1989-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English


    Keywords :


    Gallium arsenide concentrator system

    MILLER, R. / HARRIS, J. | AIAA | 1977


    Gallium Arsenide Domino Circuit

    Yang, Long / Long, Stephen I. | NTRS | 1990


    1966 Symposium on Gallium Arsenide

    P. D. Maycock | NTIS | 1966