Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.


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    Titel :

    Growing Gallium Arsenide On Silicon


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.05.1989



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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    1966 Symposium on Gallium Arsenide

    P. D. Maycock | NTIS | 1966