NASA Technical Memorandum discusses physical basis and dc and microwave characteristics of optically-controlled microwave devices described in literature. Emphasis on responses of GaAs/GaAlAs high-electron-mobility transistors (HEMT's) and GaAs metal/semiconductor field-effect transistors (MESFET's) to light. Devices used to detect radio-frequency modulation of optical signals, to control gains of amplifiers, and to provide injection locking of oscillators.


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    Title :

    Optically-Controlled Microwave Devices And Circuits


    Contributors:

    Published in:

    Publication date :

    1989-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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