Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.
Empirical Modeling Of Single-Event Upset
NASA Tech Briefs ; 12 , 11
1988-12-01
Miscellaneous
No indication
English
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