Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.


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    Title :

    Empirical Modeling Of Single-Event Upset



    Published in:

    Publication date :

    1988-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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