Concept for growing single crystals combines sheet solidification with controlled cooling. Proposed method for II/VI semiconductor compounds cools newly solidified crystal gradually and nearly isothermally so few defects formed. Method obtains maximum amount of crystal from minimum amount of melt. Double decantation causes sheet crystal to cool first in liquid, then in gas. Vessel tilted to pour off molten semiconductor material. Second tilt, in opposite direction, pours off encapsulant.


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    Title :

    Growing II/VI Semiconductors With Double Decantation


    Contributors:

    Published in:

    Publication date :

    1987-10-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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