Concept for growing single crystals combines sheet solidification with controlled cooling. Proposed method for II/VI semiconductor compounds cools newly solidified crystal gradually and nearly isothermally so few defects formed. Method obtains maximum amount of crystal from minimum amount of melt. Double decantation causes sheet crystal to cool first in liquid, then in gas. Vessel tilted to pour off molten semiconductor material. Second tilt, in opposite direction, pours off encapsulant.
Growing II/VI Semiconductors With Double Decantation
NASA Tech Briefs ; 11 , 9
01.10.1987
Sonstige
Keine Angabe
Englisch
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