Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.
Producing Silicon Carbide for Semiconductor Devices
NASA Tech Briefs ; 9 , 3
1986-01-01
Miscellaneous
No indication
English
Producing Silicon Carbide/Silicon Nitride Fibers
NTRS | 1986
Silicon Carbide Devices for Radiation Hard Applications
British Library Conference Proceedings | 1993
|Switching properties of power devices on silicon carbide and silicon
Automotive engineering | 1991
|