Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.


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    Titel :

    Producing Silicon Carbide for Semiconductor Devices


    Beteiligte:
    Hsu, G. C. (Autor:in) / Rohatgi, N. K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1986



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :




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