Silicon carbide has long been recognized as a favorable material for applications at high temperatures and in radiation environments, but device development has been hindered by lack of adequate substrates. This paper reviews the current Westinghouse material development effort aimed at the growth of high quality 6H boules and describes 6H SiC devices fabricated on Westinghouse substrates. MESFET and MOSFET transistors were made in a microwave power design layout. The MESFET and MOSFET transistors were subjected to a total gamma irradiation of 1 megaGray (100 megarad) and exhibited threshold voltage shifts of about 0.4 and 1.2 Volts respectively with little change in bulk material parameters.


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    Titel :

    Silicon carbide devices for radiation hard applications


    Beteiligte:
    McMullin, Paul G. (Autor:in) / Barrett, Donovan L. (Autor:in) / Hopkins, Richard H. (Autor:in) / Spitznagel, John A. (Autor:in) / Powell, J. Anthony (Autor:in) / Thome, Frank V. (Autor:in) / El-Genk, Mohamed S. (Herausgeber:in) / Hoover, Mark D. (Herausgeber:in)

    Kongress:

    10th SymposiumùSpace Nuclear Power and Propulsion ; 1993 ; Albuquerque, NM, USA


    Erschienen in:

    AIP Conference Proceedings ; 271 , 2 ; 625-630


    Erscheinungsdatum :

    15.01.1993


    Format / Umfang :

    6 pages





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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