Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.


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    Title :

    Plasma Deposition of Doped Amorphous Silicon


    Contributors:

    Published in:

    Publication date :

    1985-10-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English


    Keywords :