A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.


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    Title :

    A new FET-bipolar combinational power semiconductor switch


    Contributors:


    Publication date :

    1984-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    A New FET-Bipolar Combinational Power Semiconductor Switch

    Chen, D. Y. / Chandrasekaran, S. / Chin, S. A. | IEEE | 1984




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