Intermediate goal of this investigation to correlate nature and concentration of lattice defects with physicochemical conditions of preparation; namely, temperature, partial pressures of constituent elements and/or dopant concentration. Result of this investigation: possible to predict and control nature and concentration of defects as function of preparation conditions.
Defect Chemistry of Hg1-xCdxTe
NASA Tech Briefs ; 8 , 4
1985-04-01
Miscellaneous
No indication
English
Electron Spin Coherence in Long Wavelength Hg1-xCdxTe (Invited)
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|Raman investigation of optical phonons in the ion implanted Hg1−xCdxTe
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|Raman investigation of optical phonons in the ion implanted Hg1−xCdxTe
British Library Online Contents | 2016
|TB2-2 First-principle Study On The Arsenic Impurity And Mercury Vacancy in Hg1-xCdxTe
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