A preliminary assessment of the feasibility of accommodating the on-orbit R&D requirements for electroepitaxial crystal growth using the Orbiter middeck, the Materials Experiment Assembly or the Get-Away Special cans was performed. The study is based on the proposed electroepitaxial growth of single crystals of gallium arsenide (GaAs). Baseline R&D requirements, synthesizing furnace and facility conceptual design requirements, accommodation requirements, preliminary compatibility assessments are established. The systems engineering approach employed for the individual assessments is outlined.


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    Title :

    Feasibilty analyses of electroepitaxial research and development accomodations. Volume 1: Accommodations assessment


    Publication date :

    1983-03-23


    Type of media :

    Report


    Type of material :

    No indication


    Language :

    English




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