Improved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.


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    Title :

    Modified Fabrication for InGaAsP Strip Laser


    Contributors:
    Ladany, I. (author) / Furman, T. R. (author)

    Published in:

    Publication date :

    1984-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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