Improved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.
Modified Fabrication for InGaAsP Strip Laser
NASA Tech Briefs ; 8 , 2
1984-12-01
Sonstige
Keine Angabe
Englisch
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