Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.


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    Title :

    Low-Noise Submillimeter-Wave Diode


    Contributors:

    Published in:

    Publication date :

    1984-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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