Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.
Low-Noise Submillimeter-Wave Diode
NASA Tech Briefs ; 8 , 2
1984-11-01
Miscellaneous
No indication
English
BIN Diode For Submillimeter Wavelengths
NTRS | 1989
|Optimization of a Schottky Barrier Mixer Diode in the Submillimeter Wave Region
British Library Online Contents | 1994
|Integrated Submillimeter-Wave Mixer
NTRS | 1982
|The Submillimeter Wave Astronomy Satellite
Tema Archive | 1991
|