Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.


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    Title :

    Infrared-Responsive Monolithic MOS Circuit


    Contributors:

    Published in:

    Publication date :

    1984-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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