Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.
Infrared-Responsive Monolithic MOS Circuit
NASA Tech Briefs ; 8 , 2
1984-11-01
Sonstige
Keine Angabe
Englisch
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