Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Infrared-Responsive Monolithic MOS Circuit


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1984-11-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Linear Monolithic Circuit Techniques

    Leidich, A. J. | SAE Technical Papers | 1974


    Monolithic Active-Pixel Infrared Sensors

    Fossum, Eric R. / Cunningham, Thomas J. / Krabach, Timothy N. et al. | NTRS | 1995


    Linear Monolithic Circuit Techniques

    Leidich,A.J. / RCA,Solid State Div.,Somerville,US | Kraftfahrwesen | 1974


    Monolithic Optoelectronic Integrated Circuit

    Bhasin, Kul B. / Walters, Wayne / Gustafsen, Jerry et al. | NTRS | 1990


    Monolithic reflector for infrared radiation [10123-61]

    British Library Conference Proceedings | 2017