Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.


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    Title :

    Growing Single Crystals From Low-Purity Silicon


    Contributors:
    Schmid, F. (author)

    Published in:

    Publication date :

    1984-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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