Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.
Growing Single Crystals From Low-Purity Silicon
NASA Tech Briefs ; 8 , 1
1984-04-01
Sonstige
Keine Angabe
Englisch
Growing Single Crystals of Compound Semiconductors
NTRS | 1987
|Growing crystals from eutectic melts
NTRS | 1976
|Producing High-Purity Silicon With Sodium
NTRS | 1982
|Growing Crystals for Infrared Detectors
NTRS | 1984
|