Preferential etching by mixture of nitric and hydrochloric acids reveals crystal dislocation defects (type D) and impurity-dislocation defects (type S) in these crystals, which have optical and electrical applications.


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    Title :

    Etchant for HgxCd1-xTe Crystals


    Contributors:

    Published in:

    Publication date :

    1983-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English


    Keywords :


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