CADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.
CADAT field-effect-transistor simulator
NASA Tech Briefs ; 5
1981-01-01
Miscellaneous
No indication
English
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