CADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.


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    Title :

    CADAT field-effect-transistor simulator


    Published in:

    Publication date :

    1981-01-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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