Report evaluates effects of power and temperature overstress on Teledyne and Texas Instruments devices. Temperature stress caused most failures for both manufacturers' lots. Failure modes are analyzed.
JANTX2N4856 field-effect transistor
NASA Tech Briefs ; 5 , 1
1980-08-01
Miscellaneous
No indication
English
Mos field-effect-transistor technology
TIBKAT | 1968
|CADAT field-effect-transistor simulator
NTRS | 1981
DNA field effect transistor [4414-11]
British Library Conference Proceedings | 2001
|Porous-Floating-Gate Field-Effect Transistor
NTRS | 1990
|