Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.


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    Title :

    Scratch encourages selective doping


    Contributors:

    Published in:

    Publication date :

    1980-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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