Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.
Scratch encourages selective doping
NASA Tech Briefs ; 4 , 4
01.06.1980
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Englisch
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