Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.
Ohmic contact to p-type indium phosphide
NASA Tech Briefs ; 4 , 4
1980-06-01
Miscellaneous
No indication
English
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