Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.


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    Title :

    Ohmic contact to p-type indium phosphide


    Contributors:

    Published in:

    Publication date :

    1980-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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