Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.


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    Title :

    Sinterless Formation Of Contacts On Indium Phosphide


    Contributors:

    Published in:

    Publication date :

    1995-10-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






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