Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.


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    Title :

    Measuring charge nonuniformity in MOS devices


    Contributors:
    Maserjian, J. (author) / Zamani, N. (author)

    Published in:

    Publication date :

    1980-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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