Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.
Measuring charge nonuniformity in MOS devices
NASA Tech Briefs ; 4 , 3
1980-04-01
Miscellaneous
No indication
English
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