Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.


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    Titel :

    Measuring charge nonuniformity in MOS devices


    Beteiligte:
    Maserjian, J. (Autor:in) / Zamani, N. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1980-04-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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