The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event latchup (SEL) in support of a NASA GSFC flight program. The SNV54LVC00A quadruple 2-input positive-NAND gate. These devices were tested at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory (LBNL) where they were irradiated with the 10 MeV/amu heavy ion cocktail.
Single-Event Testing of the Texas Instruments SNV54LVC00AW Quadruple 2-Input Positive-NAND Gates
2020
6 pages
Report
No indication
English
Electrotechnology , Circuits , Electric potential , Linear energy transfer (let) , Oscilloscopes , Photographs , Space bases , Temperature sensors , Test facilities , Thermistors , Wafers , Xenon , Electronic equipment tests , Fluence , Heavy ions , High temperature , Ions , Irradiation , Latch-up , Light emitting diodes
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