Room-temperature continuous-wave operation of a singlemode GaInAsSb/GaSb/AlGaAsSb distributed feedback (DFB) laser is presented at a record long emission wavelength for this material system of 2.843 µm. The threshold current at 20°C is 75 mA. Mode selection was realised by metal gratings laterally patterned to a ridge waveguide. By varying the grating period, DFB emission from 2.738 up to 2.843 µm is obtained.
Long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers emitting at 2.84 µm
2006-05-11
2 pages
Article (Journal)
English
distributed feedback lasers , 2.843 micron , III-V semiconductors , DFB emission , grating period , indium compounds , 2.738 to 2.843 micron , metal gratings , waveguide lasers , single mode DFB laser , gallium arsenide , threshold current , gallium compounds , GaInAsSb-GaSb-AlGaAsSb , 75 mA , emission wavelength , ridge waveguide , diffraction gratings , laterally patterned , GaInAsSb/GaSb/AlGaAsSb DFB laser , long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers , laser transitions , semiconductor lasers , ridge waveguides , 20 degC
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