We experimentally demonstrate the presence of internal piezoelectric fields in (100)-oriented III-V semiconductor heterostructures. The piezoelectric fields are produced by internal shear strain engineered in InGaAs quantum well microbridges.
Piezoelectricity in (100) III-V semiconductors
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2129-2131 Vol. 3
2005-01-01
1877036 byte
Conference paper
Electronic Resource
English
Piezoelectricity in (100) III-V Semiconductors
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