We experimentally demonstrate the presence of internal piezoelectric fields in (100)-oriented III-V semiconductor heterostructures. The piezoelectric fields are produced by internal shear strain engineered in InGaAs quantum well microbridges.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Piezoelectricity in (100) III-V semiconductors


    Contributors:


    Publication date :

    2005-01-01


    Size :

    1877036 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Piezoelectricity in (100) III-V Semiconductors

    Stievater, T. | British Library Conference Proceedings | 2005


    Composites transform piezoelectricity

    Dawn, Tom | Online Contents | 1995


    Multiobjective Design of Piezoelectricity Damped Structures

    Veley, D. / Rao, S. / American Institute of Aeronautics and Astronautics et al. | British Library Conference Proceedings | 1996


    Electric power generation with piezoelectricity for cargo ships

    Ulhoa, Fernando Cunha Pimentel / Magalhaes, Pedro Americo Almeida / de Souza Floriano, Rafael Augusto et al. | IEEE | 2017


    Control of Plate Vibrations with Artificial Neural Networks and Piezoelectricity

    Avci, Onur / Abdeljaber, Osama / Kiranyaz, Serkan et al. | TIBKAT | 2020