GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were successfully grown by low temperature growth. In-rich InGaN/GaN quantum dots showed enhanced emission properties whose wavelength could be controlled to even near-ultraviolet region. Large blue shift of emission peaks from In-rich InGaN quantum dots is supposed to be due to the strong carrier localization effect caused by small size and large band-offset in the structure.


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    Title :

    Growth and optical properties of GaN-based quantum dots


    Contributors:


    Publication date :

    2003-01-01


    Size :

    77708 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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