GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were successfully grown by low temperature growth. In-rich InGaN/GaN quantum dots showed enhanced emission properties whose wavelength could be controlled to even near-ultraviolet region. Large blue shift of emission peaks from In-rich InGaN quantum dots is supposed to be due to the strong carrier localization effect caused by small size and large band-offset in the structure.


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    Titel :

    Growth and optical properties of GaN-based quantum dots


    Beteiligte:
    Hyun Jin Kim, (Autor:in) / Hyunseok Na, (Autor:in) / Soon-Yong Kwon, (Autor:in) / Young-Woon Kim, (Autor:in) / Euijoon Yoon, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    77708 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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